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Same model may have multiple batches, images only for reference.
SI4004DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4004DY-T1-GE3

Part No SI4004DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 12A 8-SOIC
Datasheet
SI4004DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1280pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095880-SI4004DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4004DY-T1-GE3 CAD Model

Description

The SI4004DY-T1-GE3 is an N-Channel MOSFET with a cut reel packaging and SMD (SMT) mounting technology.

  • Manufacturer: Vishay
  • Packaging: cut reel
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 2.5W (Ta), 5W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Category: discrete semiconductor products
  • Status: obsolete (EOL)
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5740 $59.2020
55+ $2.1120 $116.1600
85+ $2.0460 $173.9100
117+ $1.9801 $231.6717
151+ $1.9140 $289.0140
202+ $1.7160 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,600 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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