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SI4110DY-T1-GE3

Part No SI4110DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 17.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 2205pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 11.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095892-SI4110DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4110DY-T1-GE3 CAD Model

Description

The SI4110DY-T1-GE3 is an N-Channel MOSFET transistor from Vishay designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 17.3A (Tc)
  • Maximum Gate Charge: 53nC @ 10V
  • Maximum Input Capacitance: 2205pF @ 40V
  • Maximum Rds On @ Id, Vgs: 13 mOhm @ 11.7A, 10V
  • Packaging: Reel-TR
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Alternative Parts (Cross-Reference): AO4444L and Si4110DY

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9831 $59.4930
75+ $1.6274 $122.0550
110+ $1.5766 $173.4260
155+ $1.5258 $236.4990
200+ $1.4749 $294.9800
265+ $1.3225 $350.4625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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