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SI4151DY-T1-GE3

Part No SI4151DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 30-V (D-S) MOSFET SO-8 / P-Channel 30 V 15.2A (Ta), 20.5A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 15.2A (Ta) , 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta) , 5.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349295-SI4151DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4151DY-T1-GE3 CAD Model

Description

The SI4151DY-T1-GE3 is a P-channel MOSFET used for discrete semiconductor applications.

  • FET Type: P-Channel
  • FET Feature: MOSFET
  • Category: Transistors - FETs, MOSFETs - Single
  • Manufacturer: Vishay Siliconix
  • Packaging: Tape & Reel (TR)
  • Standard Package: 2,500
  • Drain to Source Voltage (Vdss): 30V
  • Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
  • REACH: Unaffected
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1312 $50.9040
110+ $0.9282 $102.1020
170+ $0.8992 $152.8640
230+ $0.8702 $200.1460
300+ $0.8412 $252.3600
400+ $0.7542 $301.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,810 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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