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SI4154DY-T1-GE3

Part No SI4154DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 36A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 4230pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 321659-SI4154DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4154DY-T1-GE3 CAD Model

Description

The Vishay SI4154DY-T1-GE3 is an N-channel MOSFET designed for discrete semiconductor products.

  • Package: 8-SO
  • Mounting Technology: SMD (SMT)
  • Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 36A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 105nC @ 10V
  • Max Input Capacitance: 4230pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 3.3 mOhm @ 15A, 10V
  • Popularity: High
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3514 $54.0560
95+ $1.1089 $105.3455
140+ $1.0742 $150.3880
195+ $1.0396 $202.7220
250+ $1.0049 $251.2250
335+ $0.9010 $301.8350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,057 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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