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SI4168DY-T1-GE3

Name: SI4168DY-T1-GE3
Brand: Vishay
SKU: 321667
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI4168DY-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 24A 8-SOIC / Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
Datasheet	SI4168DY-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	44nC @ 10V
Max Input Capacitance	1720pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs	5.7 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	108092-SI4168DY-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Family Name	Si4168DY
Introduction Date	November 09, 2008
ECCN	EAR99
Country of Origin	China
Halogen Free	Compliant
Estimated EOL Date	2027
Ultra Librarian 3D Model	Ultra Librarian SI4168DY-T1-GE3 CAD Model

Alternative Products

Description

This MOSFET, part of the Si4168DY family by Vishay, has a drain-source breakdown voltage of 30V and a continuous drain current of 24A (Tc) @ 25°C.

Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 44nC @ 10V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V
Package: 8-SOIC
Mounting: SMD (SMT)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
145+	$0.4008	$58.1160
355+	$0.3292	$116.8660
545+	$0.3188	$173.7460
750+	$0.3084	$231.3000
970+	$0.2980	$289.0600
1,295+	$0.2680	$347.0600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 57,900 pieces

MOQ: 145 pcs

Order Increment : 1 pcs

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