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Same model may have multiple batches, images only for reference.
SI4330DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4330DY-T1-GE3

Part No SI4330DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI4330DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.6A
Rds On (Max) @ Id, Vgs 16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Power - Max 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4330
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278476-SI4330DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4330DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4330DY-T1-GE3 is a dual N-channel MOSFET array used in various electronic applications.

  • Drain to Source Voltage: 30V
  • Current Rating: 6.6A @ 25°C
  • Rds on (Max): 16.5mOhm @ 8.7A, 10V
  • Gate Charge (Qg) (Max): 20nC @ 4.5V

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