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Same model may have multiple batches, images only for reference.
SI4340CDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4340CDY-T1-E3

Part No SI4340CDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 14.1A 14-SOIC
Datasheet
SI4340CDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 14.1A, 20A
Maximum Rds On at Id,Vgs 9.4 mOhm @ 11.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1300pF @ 10V
Maximum Power Dissipation 3W, 5.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 14-SOIC
Win Source Part Number 028466-SI4340CDY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4340CDY-T1-E3 CAD Model

Description

The SI4340CDY-T1-E3 is a dual N-channel MOSFET from Vishay.

  • Status: obsolete(EOL)
  • Popularity: medium
  • Maximum Power Dissipation: 3W and 5.4W
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 14.1A and 20A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Rds On: 9.4 mOhm @ 11.5A and 10V

This MOSFET is an efficient solution for power management.

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Quantity Unit Price Ext. Price
35+ $1.7597 $61.5895
80+ $1.4439 $115.5120
125+ $1.3987 $174.8375
175+ $1.3537 $236.8975
225+ $1.3085 $294.4125
300+ $1.1732 $351.9600
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