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SI4403BDY-T1-E3

Part No SI4403BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 350μA
Max Gate Charge 50nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.35W (Ta)
Maximum Rds On at Id,Vgs 17 mOhm @ 9.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 109830-SI4403BDY-T1-E3
Family Name Si4403BDY
Introduction Date July 01, 2003
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4403BDY-T1-E3 CAD Model

Description

The Vishay Si4403BDY-T1-E3 is a MOSFET device that falls under the category of discrete semiconductor products.

  • Polarity: P-Channel MOSFET
  • Maximum Power Dissipation: 1.35W
  • Drain-Source Breakdown Voltage: 20V
  • Supply and Demand Status: Balanced
  • Alternative Part: Si4403BDY-E3
  • Estimated EOL Date: Reached

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9656 $57.9360
150+ $0.7923 $118.8450
230+ $0.7676 $176.5480
315+ $0.7428 $233.9820
405+ $0.7181 $290.8305
540+ $0.6438 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,401 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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