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Same model may have multiple batches, images only for reference.
SI4401DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4401DY-T1-GE3

Part No SI4401DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 8.7A 8-SOIC
Datasheet
SI4401DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 50nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 15.5 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 108523-SI4401DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4401DY-T1-GE3 CAD Model

Description

The SI4401DY-T1-GE3 is a P-channel MOSFET transistor from Vishay that is designed for surface mount applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 8.7A (Ta)
  • Maximum Rds On: 15.5 mOhm @ 10.5A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 50nC @ 5V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4701 $58.7625
300+ $0.3858 $115.7400
465+ $0.3731 $173.4915
640+ $0.3615 $231.3600
830+ $0.3500 $290.5000
1,110+ $0.3130 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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