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Same model may have multiple batches, images only for reference.
SI4404DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4404DY-T1-GE3

Part No SI4404DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A 8-SOIC
Datasheet
SI4404DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 55nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 109533-SI4404DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4404DY-T1-GE3 CAD Model

Description

The Vishay SI4404DY-T1-GE3 MOSFET is a surface-mount N-channel device designed for use in various applications, including power management and switching circuits.

  • Maximum Power Dissipation: 1.6W
  • Continuous Drain Current: 15A @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 55nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 6.5 mOhm @ 23A, 10V
  • Package: 8-SOIC
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,579 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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