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SI4420BDY-T1-E3 Real Image SI4420BDY-T1-E3 real image5431
Same model may have multiple batches, images only for reference.
SI4420BDY-T1-E3 Real Image SI4420BDY-T1-E3 real image5431
SI4420BDY-T1-E3 Real Image SI4420BDY-T1-E3 real image5431
Same model may have multiple batches, images only for reference.

SI4420BDY-T1-E3

Part No SI4420BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.5A 8-SOIC
Datasheet
SI4420BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 50nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028477-SI4420BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4420BDY-T1-E3 CAD Model

Description

The Vishay SI4420BDY-T1-E3 is an N-Channel MOSFET that is used in discrete semiconductor products.

  • Power Dissipation: 1.4W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 9.5A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Rds On @ Id,Vgs: 8.5 mOhm @ 13.5A, 10V
  • Package: reel-TR
  • Mounting: SMD (SMT)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8280 $53.8200
150+ $0.6794 $101.9100
230+ $0.6581 $151.3630
315+ $0.6369 $200.6235
410+ $0.6157 $252.4370
545+ $0.5520 $300.8400
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