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Same model may have multiple batches, images only for reference.
SI4430BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4430BDY-T1-GE3

Part No SI4430BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8-SOIC
Datasheet
SI4430BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 36nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095939-SI4430BDY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4430BDY-T1-GE3 CAD Model

Description

The Vishay SI4430BDY-T1-GE3 is a MOSFET technology product.

  • Polarity: N-Channel
  • Power Dissipation: 1.6W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
545+ $0.2137 $116.4665
840+ $0.2067 $173.6280
1,160+ $0.1998 $231.7680
1,490+ $0.1940 $289.0600
2,000+ $0.1733 $346.6000
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Availability: 36,000 pieces
MOQ: 225 pcs
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