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Same model may have multiple batches, images only for reference.
SI4455DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4455DY-T1-E3

Part No SI4455DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 2.8A 8-SOIC
Datasheet
SI4455DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1190pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 5.9W (Tc)
Maximum Rds On at Id,Vgs 295 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095951-SI4455DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4455DY-T1-E3 CAD Model

Description

The SI4455DY-T1-E3 is a P-channel MOSFET transistor manufactured by Vishay.

  • Manufacturer: Vishay
  • Type: P-channel MOSFET Transistor
  • Applications: Power Management
  • Power Dissipation (Ta): 3.1W
  • Power Dissipation (Tc): 5.9W
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5572 $50.1480
220+ $0.4572 $100.5840
340+ $0.4429 $150.5860
470+ $0.4286 $201.4420
605+ $0.4143 $250.6515
810+ $0.3715 $300.9150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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