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Same model may have multiple batches, images only for reference.
SI4480EY
Same model may have multiple batches, images only for reference.

SI4480EY

Part No SI4480EY
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Interface ICs 80V 6A 2.5W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 6.2 A
Drain to Source Breakdown Voltage 80 V
Drain to Source Resistance 35 mΩ
Drain to Source Voltage (Vdss) 80 V
Dual Supply Voltage 80 V
Element Configuration Single
Fall Time 22 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 175 °C
Max Power Dissipation 3 W
Min Operating Temperature -55 °C
Nominal Vgs 2 V
Number of Channels 1
Number of Pins 8
Power Dissipation 3 W
Resistance 35 mΩ
Rise Time 12.5 ns
RoHS Compliant
Termination SMD/SMT
Turn-Off Delay Time 52 ns
Turn-On Delay Time 12.5 ns
Weight 84.99187 mg
Width 4 mm
Win Source Part Number 1092857-SI4480EY
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4480EY CAD Model

Description

The SI4480EY is a single channel MOSFET transistor that has a drain-to-source voltage of 80V and a power dissipation of 3W from Vishay.

  • Resistance: 35 mΩ
  • Maximum Operating Temperature: 175 °C
  • Termination: SMD/SMT
  • Rise Time: 12.5 ns
  • Fall Time: 22 ns
  • Category: Transistors - FETs, MOSFETs - RF
  • Case/Package: SO
  • RoHS: compliant
  • Supply and Demand Status: shortage

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