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Same model may have multiple batches, images only for reference.
SI4569DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4569DY-T1-E3

Part No SI4569DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 7.6A 8-SOIC
Datasheet
SI4569DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.6A, 7.9A
Maximum Rds On at Id,Vgs 27 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 855pF @ 20V
Maximum Power Dissipation 3.1W, 3.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 138402-SI4569DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI4569DY-T1-E3 CAD Model

Description

The Vishay SI4569DY-T1-E3 is a N and P-Channel FET type discrete semiconductor product.

  • Feature: Standard
  • Mounting: SMD (SMT) technology
  • Packaging: 8-SO
  • Maximum Power Dissipation: 3.1W, 3.2W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 7.6A, 7.9A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Input Capacitance: 855pF @ 20V
  • Maximum Rds On @ Id,Vgs: 27 mOhm @ 6A, 10V
  • Popularity: Medium
  • Used In: Power management
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,427 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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