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Same model may have multiple batches, images only for reference.
SUP85N15-21 Real Image
Same model may have multiple batches, images only for reference.

SUP85N15-21

Part No SUP85N15-21
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 85A TO220AB
Datasheet
SUP85N15-21 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 300W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 057028-SUP85N15-21
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP85N15-21 CAD Model

Description

The SUP85N15-21 is a N-Channel MOSFET that comes with a Drain-Source Breakdown Voltage of 150V and a Continuous Drain Current @ 25°C of 85A (Tc).

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 85A (Tc)
  • Maximum Rds On @ Id, Vgs: 21 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-220AB
  • Mounting: through hole
  • Maximum Gate-Source Voltage: ±20V
  • Max Input Capacitance: 4750pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Application: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
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29+ $4.0240 $116.6960
45+ $3.8981 $175.4145
62+ $3.7734 $233.9508
80+ $3.6475 $291.8000
106+ $3.2698 $346.5988
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Availability: 1,180 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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