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SI4620DY-T1-GE3

Part No SI4620DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 1040pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095970-SI4620DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4620DY-T1-GE3 CAD Model

Description

The Vishay 1095970-SI4620DY-T1-GE3 is a MOSFET FET feature Schottky diode (isolated) that is used in a variety of electronic devices.

  • Polarity: N-Channel
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6A (Ta), 7.5A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 1040pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Balance

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