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Same model may have multiple batches, images only for reference.
SI4668DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4668DY-T1-GE3

Part No SI4668DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 16.2A 8-SOIC
Datasheet
SI4668DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 16.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1654pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095980-SI4668DY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4668DY-T1-GE3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has a Win Source Part Number of 1095980-SI4668DY-T1-GE3.

  • Polarity: N-Channel
  • Power Dissipation: 2.5W (Ta), 5W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 10.5 mOhm @ 15A, 10V

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