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Same model may have multiple batches, images only for reference.
SI4688DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4688DY-T1-E3

Part No SI4688DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.9A 8-SOIC / Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
Datasheet
SI4688DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1580pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.4W (Ta)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 794260-SI4688DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4688DY
Introduction Date September 25, 2009
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4688DY-T1-E3 CAD Model

Description

The Vishay Siliconix TrenchFET electronic component is a high-quality product.

  • Technology: MOSFET
  • Current Continuous Drain (Id) @ 25°C: 8.9A (Ta)
  • Power Dissipation (Maximum): 1.4W (Ta)
  • Supply & Demand Status: Limited
  • Package Type: Reel

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