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Same model may have multiple batches, images only for reference.
SI4833ADY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4833ADY-T1-E3

Part No SI4833ADY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.6A 8-SOIC
Datasheet
SI4833ADY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 750pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.93W (Ta), 2.75W (Tc)
Maximum Rds On at Id,Vgs 72 mOhm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 124682-SI4833ADY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4833ADY-T1-E3 CAD Model

Description

The Vishay 124682-SI4833ADY-T1-E3 is a P-Channel MOSFET with a Schottky diode feature.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.6A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 72 mOhm @ 3.6A, 10V
  • Mounting: SMD (SMT) package
  • Drive Voltage: 4.5V, 10V
  • Supply and Demand Status: Limited
  • Status: Obsolete (EOL)

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