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Same model may have multiple batches, images only for reference.
SI4836DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4836DY-T1-E3

Part No SI4836DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 17A 8-SOIC
Datasheet
SI4836DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 400mV @ 250μA (Min)
Max Gate Charge 75nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096020-SI4836DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4836DY-T1-E3 CAD Model

Description

The Vishay SI4836DY-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor applications.

  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Maximum Power Dissipation: 1.6W
  • Maximum Continuous Drain Current @ 25°C: 17A
  • Gate-Source Threshold Voltage: 400mV
  • Maximum Gate-Source Voltage: ±8V
  • Package: 8-SO
  • Width: 3.90mm
  • Mounting: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2338 $67.0140
65+ $1.8330 $119.1450
100+ $1.7764 $177.6400
135+ $1.7186 $232.0110
175+ $1.6609 $290.6575
235+ $1.4900 $350.1500
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