The Vishay SI4838BDY-T1-GE3 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

• Package: 8-SO
• Drain-Source Breakdown Voltage: 12V
• Continuous Drain Current @ 25°C: 34A (Tc)
• Maximum Rds On @ Id, Vgs: 2.7 mOhm @ 15A, 4.5V
• Gate-Source Threshold Voltage: 1V @ 250μA
• Maximum Gate Charge: 84nC @ 4.5V
• Maximum Input Capacitance: 5760pF @ 6V
• Maximum Gate-Source Voltage: ±8V
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Operating Temperature: -55°C to 150°C (TJ)
• Power Dissipation: 2.5W (Ta), 5.7W (Tc)
• Quantity: Balance