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Same model may have multiple batches, images only for reference.
SI4886DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4886DY-T1-E3

Part No SI4886DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.5A 8-SOIC
Datasheet
SI4886DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 117868-SI4886DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4886DY-T1-E3 CAD Model

Description

The Vishay SI4886DY-T1-E3 is an N-Channel MOSFET electronic component that is obsolete (EOL).

  • Applications: industrial and power management applications
  • Maximum Rds On: 10 mOhm @ 13A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer Website: www.vishay.com

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