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Same model may have multiple batches, images only for reference.
SI4904DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4904DY-T1-GE3

Part No SI4904DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 8A 8-SOIC
Datasheet
SI4904DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 16 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 2390pF @ 20V
Maximum Power Dissipation 3.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096030-SI4904DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4904DY-T1-GE3 CAD Model

Description

The SI4904DY-T1-GE3 is a dual N-channel FET designed for switching applications.

  • Mounting: Surface Mount Device (SMD)
  • Package: 8-SO
  • Packaging: Reel
  • Maximum Power Dissipation: 3.25W
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 8A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 85nC @ 10V
  • Maximum Input Capacitance: 2390pF @ 20V
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 5A and 10V
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,360 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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