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SI4906DY-T1-GE3

Part No SI4906DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 6.6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6.6A
Maximum Rds On at Id,Vgs 39 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 625pF @ 20V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096031-SI4906DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4906DY-T1-GE3 CAD Model

Description

The Vishay SI4906DY-T1-GE3 is a dual N-Channel FET, which is now obsolete.

  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 6.6A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 625pF @ 20V
  • Maximum Rds On @ Id, Vgs: 39 mOhm @ 5A, 10V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.8087 $67.2348
9+ $13.7919 $124.1271
13+ $13.3610 $173.6930
18+ $12.9291 $232.7238
24+ $12.4983 $299.9592
31+ $11.2058 $347.3798
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Availability: 2,500 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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