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SI4948BEY-T1-GE3 Real Image SI4948BEY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI4948BEY-T1-GE3 Real Image SI4948BEY-T1-GE3 Real Image
SI4948BEY-T1-GE3 Real Image SI4948BEY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4948BEY-T1-GE3

Part No SI4948BEY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 60V 2.4A 8-SOIC
Datasheet
SI4948BEY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.4A
Maximum Rds On at Id,Vgs 120 mOhm @ 3.1A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096046-SI4948BEY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4948BEY-T1-GE3 CAD Model

Description

The SI4948BEY-T1-GE3 is a dual 2 P-channel MOSFET from Vishay.

  • Designed to have a drain-source breakdown voltage of 60V
  • Continuous drain current of 2.4A @ 25°C
  • MOSFET operates on a temperature range of -55°C to 175°C
  • Available in a reel package
  • Reliable and efficient MOSFET that can be used in various discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5019 $50.1900
245+ $0.4118 $100.8910
380+ $0.3990 $151.6200
520+ $0.3861 $200.7720
670+ $0.3732 $250.0440
900+ $0.3346 $301.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,750 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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