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Same model may have multiple batches, images only for reference.
SI4963BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4963BDY-T1-GE3

Part No SI4963BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.9A 8SOIC
Datasheet
SI4963BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.9A
Maximum Rds On at Id,Vgs 32 mOhm @ 6.5A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 21nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096048-SI4963BDY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4963BDY-T1-GE3 CAD Model

Description

The Vishay SI4963BDY-T1-GE3 is a dual P-channel FET (Field Effect Transistor).

  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Gate Type: Logic Level
  • Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V

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