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Same model may have multiple batches, images only for reference.
SI5443DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5443DC-T1-E3

Part No SI5443DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.6A 1206-8
Datasheet
SI5443DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 14nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028574-SI5443DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5443DC-T1-E3 CAD Model

Description

The SI5443DC-T1-E3 is a P-channel MOSFET manufactured by Vishay.

  • Popularity: High
  • Supply and Demand Status: Balanced
  • Application: Discrete Semiconductor Products
  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.6A
  • Package: 1206-8 ChipFET
  • Package Type: 8-SMD flat lead

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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