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SI5515CDC-T1-E3

Part No SI5515CDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 4A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 11.3nC @ 5V
Max Input Capacitance 632pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 046874-SI5515CDC-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5515CDC-T1-E3 CAD Model

Description

Vishay's 046874-SI5515CDC-T1-E3 is an active N and P-channel FET that is designed for discrete semiconductor products.

  • Packaging: reel-TR
  • Mounting Type: SMD (SMT)
  • FET feature: logic level gate
  • Category: discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 3.1W
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4819 $57.8280
295+ $0.3955 $116.6725
455+ $0.3832 $174.3560
625+ $0.3708 $231.7500
810+ $0.3584 $290.3040
1,080+ $0.3213 $347.0040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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