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Same model may have multiple batches, images only for reference.
SI5915BDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5915BDC-T1-E3

Part No SI5915BDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 4A 1206-8
Datasheet
SI5915BDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.3A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 8V
Max Input Capacitance 420pF @ 4V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 064537-SI5915BDC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5915BDC-T1-E3 CAD Model

Description

The Vishay SI5915BDC-T1-E3 is an obsolete(EOL) electronic component with medium popularity in the market.

  • FET Type: 2 P-Channel (Dual)
  • Gate: Logic Level Gate
  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 3.3A, 4.5V
  • Technology: SMD (SMT)
  • Suitable for: Electronic devices that require medium performance

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5879 $58.7900
240+ $0.4828 $115.8720
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3927 $347.5395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 100 pcs
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