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SI5933CDC-T1-E3

Part No SI5933CDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.7A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.8nC @ 5V
Max Input Capacitance 276pF @ 10V
Maximum Power Dissipation 2.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 064538-SI5933CDC-T1-E3
Family Name Si5933CDC
Introduction Date August 08, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5933CDC-T1-E3 CAD Model

Description

The Si5933CDC-T1-E3 is a dual P-channel FET manufactured by Vishay. It belongs to the Si5933CDC family and is part of the Discrete Semiconductor Products category.

  • Mounting: 1206-8 ChipFET
  • Maximum Power Dissipation: 2.8W
  • Operating Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3.7A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 6.8nC @ 5V
  • Maximum Input Capacitance: 276pF @ 10V
  • Maximum Rds On @ Id,Vgs: 144 mOhm @ 2.5A, 4.5V
  • Introduction Date: August 2008
  • Usage: Common-used part
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
935+ $0.1236 $115.5660
1,445+ $0.1201 $173.5445
1,985+ $0.1167 $231.6495
2,580+ $0.1120 $288.9600
3,450+ $0.1005 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,810 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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