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Same model may have multiple batches, images only for reference.
SI6410DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6410DQ-T1-GE3

Part No SI6410DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.8A 8-TSSOP
Datasheet
SI6410DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 33nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 100397-SI6410DQ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI6410DQ-T1-GE3 CAD Model

Description

The SI6410DQ-T1-GE3 is an N-channel MOSFET manufactured by Vishay. The device is obsolete (EOL) and has a medium popularity.

  • Channel Type: N-channel
  • Manufacturer: Vishay
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package: 8-TSSOP
  • Dimension: 8-TSSOP (0.173", 4.40mm Width)
  • Maximum Rds On @ Id, Vgs: 14 mOhm @ 7.8A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7066 $61.1858
30+ $3.8623 $115.8690
47+ $3.7410 $175.8270
64+ $3.6209 $231.7376
83+ $3.4997 $290.4751
111+ $3.1381 $348.3291
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Availability: 7,275 pieces
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