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Same model may have multiple batches, images only for reference.
SI6466ADQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6466ADQ-T1-E3

Part No SI6466ADQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.8A 8TSSOP / Trans MOSFET N-CH 20V 8.1A 8-Pin TSSOP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 450mV @ 250μA (Minimum)
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 5V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.05W (Ta)
Rds On (Maximum) @ Id, Vgs 14 mOhm @ 8.1A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSSOP
Package 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 794303-SI6466ADQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si6466ADQ
Introduction Date May 11, 2000
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI6466ADQ-T1-E3 CAD Model

Description

The Vishay Siliconix 794303-SI6466ADQ-T1-E3 is an N-channel MOSFET transistor with a drain-source voltage of 20V and a continuous drain current of 6.8A.

  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 6.8A
  • Gate-Source Voltage (Maximum): ±8V
  • Gate Charge: 27nC @ 5V
  • Maximum Power Dissipation: 1.05W
  • Gate-Source Voltage Threshold: 450mV @ 250μA
  • Package: 8-TSSOP
  • Supply and Demand: Limited
  • Manufacturer's Homepage: www.irf.com

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