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Same model may have multiple batches, images only for reference.
SI6562DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6562DQ-T1-GE3

Part No SI6562DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-TSSOP
Datasheet
SI6562DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 30 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 25nC @ 4.5V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 322515-SI6562DQ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6562DQ-T1-GE3 CAD Model

Description

The Vishay 322515-SI6562DQ-T1-GE3 is a logic level gate N and P-channel FET chip that comes in an 8-TSSOP package.

  • FET Type: Logic Level Gate
  • Package: 8-TSSOP
  • Application: Discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage @ 250μA (Min): 600mV
  • Maximum Gate Charge @ 4.5V: 25nC
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 4.5A, 4.5V
  • Status: Common-used part
  • Popularity: High (37 pct)

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