The SI6820DQ-T1-E3 is a P-Channel 20 V MOSFET from Vishay Siliconix, designed for a broad range of power management and load switching applications. This MOSFET utilizes Vishay's advanced TrenchFET® power MOSFET technology to deliver high efficiency and low on-resistance in a compact PowerPAK® SC-70 package.

Applications

• Load switching in portable devices
• Battery management systems
• Power management in smartphones and tablets
• DC-DC converters
• Level shifting

Features

• P-Channel MOSFET
• Voltage: 20 V
• Low on-resistance (RDS(on))
• Logic-level gate drive
• PowerPAK® SC-70 package
• TrenchFET® power MOSFET technology

Benefits

• Increased efficiency in power management circuits
• Reduced power loss due to low on-resistance
• Directly driven by logic-level signals, simplifying circuit design
• Space-saving due to small PowerPAK® SC-70 package
• Improved thermal performance

Additional Details

The SI6820DQ-T1-E3 features a typical on-resistance (RDS(on)) of 0.035 Ohms at a gate-source voltage (VGS) of -4.5 V and a drain current (ID) of -4.4 A. At a VGS of -2.5 V, the typical RDS(on) is 0.050 Ohms with an ID of -3.5 A. The gate threshold voltage (VGS(th)) typically ranges from -0.4 V to -1.0 V. The maximum continuous drain current is -4.4 A. The PowerPAK® SC-70 package provides excellent thermal performance, allowing for efficient heat dissipation. This MOSFET is lead-free and RoHS compliant, making it suitable for environmentally conscious applications. The device is designed for surface mount technology (SMT) and comes on tape and reel for automated assembly.