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Same model may have multiple batches, images only for reference.
SI6923DQ-T1-E3
Same model may have multiple batches, images only for reference.

SI6923DQ-T1-E3

Part No SI6923DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 20V 3.5A 1.2W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 3.5 A
Drain to Source Resistance 50 mΩ
Drain to Source Voltage (Vdss) -20 V
Fall Time 30 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.2 W
Min Operating Temperature -55 °C
Number of Channels 1
Power Dissipation 1.2 W
Rise Time 30 ns
RoHS Compliant
Turn-Off Delay Time 57 ns
Turn-On Delay Time 27 ns
Win Source Part Number 978328-SI6923DQ-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6923DQ-T1-E3 CAD Model

Description

The Vishay SI6923DQ-T1-E3 is a MOSFET transistor designed for RF applications.

  • Drain to Source Voltage: -20V
  • Power Dissipation: 1.2W
  • Channel: single
  • Mounting: surface-mounted in a TSSOP case
  • Maximum Operating Temperature: 150 °C
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6818 $51.1350
180+ $0.5595 $100.7100
280+ $0.5420 $151.7600
385+ $0.5245 $201.9325
495+ $0.5070 $250.9650
660+ $0.4546 $300.0360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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