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Same model may have multiple batches, images only for reference.
SI6925ADQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6925ADQ-T1-GE3

Part No SI6925ADQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 3.3A 8-TSSOP
Datasheet
SI6925ADQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.3A
Maximum Rds On at Id,Vgs 45 mOhm @ 3.9A, 4.5V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1096113-SI6925ADQ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI6925ADQ-T1-GE3 CAD Model

Description

The Vishay SI6925ADQ-T1-GE3 is an obsolete (EOL) 2 N-Channel (Dual) FET with a logic level gate.

  • Status: Obsolete (EOL)
  • Type: 2 N-Channel (Dual) FET
  • Gate Type: Logic Level
  • Power Dissipation: 800mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.3A @ 25°C
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Gate Charge (Max): 6nC @ 4.5V
  • Rds On @ Id,Vgs (Max): 45 mOhm @ 3.9A, 4.5V
  • Package: 8-TSSOP
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8677 $51.6186
43+ $2.3530 $101.1790
66+ $2.2794 $150.4404
91+ $2.2059 $200.7369
118+ $2.1324 $251.6232
157+ $1.9118 $300.1526
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Availability: 4,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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