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SI6926ADQ-T1-GE3 Real Image SI6926ADQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI6926ADQ-T1-GE3 Real Image SI6926ADQ-T1-GE3 Real Image
SI6926ADQ-T1-GE3 Real Image SI6926ADQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6926ADQ-T1-GE3

Part No SI6926ADQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.1A 8-TSSOP
Datasheet
SI6926ADQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.1A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10.5nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 028588-SI6926ADQ-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6926ADQ-T1-GE3 CAD Model

Description

The SI6926ADQ-T1-GE3 is a dual N-channel logic level gate FET from Vishay.

  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.1A
  • Gate-Source Threshold Voltage @ 250µA: 1V
  • Maximum Gate Charge @ 4.5V: 10.5nC
  • Maximum Rds On @ 4.5A, 4.5V: 30 mOhm
  • Mounting Type: SMD (SMT)
  • Package: 8-TSSOP
  • Temperature Range: -55°C to 150°C (TJ)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 25 pcs
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