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Same model may have multiple batches, images only for reference.
SI6969BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6969BDQ-T1-E3

Part No SI6969BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4A 8TSSOP
Datasheet
SI6969BDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.6A, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 131203-SI6969BDQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6969BDQ-T1-E3 CAD Model

Description

The Vishay 131203-SI6969BDQ-T1-E3 is a dual P-channel logic level gate FET suitable for use in various applications.

  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 4A
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-TSSOP
  • Maximum Rds On: 30 mOhm @ 4.6A and 4.5V

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