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Same model may have multiple batches, images only for reference.
IRF6655TRPBF
Same model may have multiple batches, images only for reference.

IRF6655TRPBF

Part No IRF6655TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.2A DIRECTFET
Datasheet
IRF6655TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.8V @ 25μA
Max Gate Charge 11.7nC @ 10V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 62 mOhm @ 5A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SH
Dimension DirectFET Isometric SH
Win Source Part Number 040692-IRF6655TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6655TRPBF CAD Model

Description

The Infineon Technologies IRF6655TRPBF is an N-Channel MOSFET that is designed for use in a variety of applications.

  • Maximum Power Dissipation: 2.2W
  • Drain-Source Breakdown Voltage: 100V
  • Application: capable of handling low to medium power applications
  • Gate-Source Threshold Voltage: 4.8V @ 25μA
  • Maximum Gate Charge: 11.7nC @ 10V
  • Package: housed in a DirectFET SH package
  • Maximum Rds On: 62 mOhm @ 5A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5342 $50.7490
230+ $0.4384 $100.8320
355+ $0.4247 $150.7685
490+ $0.4110 $201.3900
630+ $0.3973 $250.2990
845+ $0.3562 $300.9890
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Availability: 1,557 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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