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Same model may have multiple batches, images only for reference.
SI7107DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7107DN-T1-E3

Part No SI7107DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 9.8A 1212-8
Datasheet
SI7107DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 450μA
Max Gate Charge 44nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 10.8 mOhm @ 15.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064547-SI7107DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7107DN-T1-E3 CAD Model

Description

The Vishay 064547-SI7107DN-T1-E3 is a P-Channel MOSFET, designed for use in Discrete Semiconductor Products.

  • Mounting Technology: SMD (SMT)
  • Package: Reel - TR
  • Power Dissipation: 1.5W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Continuous Drain Current: 9.8A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 450μA
  • Max Gate Charge: 44nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 10.8 mOhm @ 15.3A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited
  • Application: Industrial power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7590 $57.9390
52+ $2.2638 $117.7176
79+ $2.1931 $173.2549
109+ $2.1224 $231.3416
141+ $2.0517 $289.2897
189+ $1.8394 $347.6466
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