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Same model may have multiple batches, images only for reference.
SI7107DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7107DN-T1-GE3

Part No SI7107DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 9.8A 1212-8
Datasheet
SI7107DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 450μA
Max Gate Charge 44nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 10.8 mOhm @ 15.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 139049-SI7107DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7107DN-T1-GE3 CAD Model

Description

This MOSFET is manufactured by Vishay and has a Win Source Part Number of 139049-SI7107DN-T1-GE3.

  • Packaging: reel
  • Mounting Technology: SMD (SMT)
  • Product Category: Discrete Semiconductor Product
  • Polarity: P-Channel
  • Maximum Power Dissipation: 1.5W (Ta)
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case / Package: PowerPAK 1212-8
  • Dimension: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 9.8A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 450μA
  • Maximum Gate Charge: 44nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 10.8 mOhm @ 15.3A, 4.5V
  • Supply and Demand Status: balanced
  • Application: industrial and power management fields

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