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SI7220DN-T1-E3 Real Image SI7220DN-T1-E3 real image5482 SI7220DN-T1-E3 Real Image1 SI7220DN-T1-E3 Real Image2
Same model may have multiple batches, images only for reference.
SI7220DN-T1-E3 Real Image SI7220DN-T1-E3 real image5482 SI7220DN-T1-E3 Real Image1 SI7220DN-T1-E3 Real Image2
SI7220DN-T1-E3 Real Image SI7220DN-T1-E3 real image5482 SI7220DN-T1-E3 Real Image1 SI7220DN-T1-E3 Real Image2
Same model may have multiple batches, images only for reference.

SI7220DN-T1-E3

Part No SI7220DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 3.4A 1212-8
Datasheet
SI7220DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 60 mOhm @ 4.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028618-SI7220DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7220DN-T1-E3 CAD Model

Description

The 028618-SI7220DN-T1-E3 is a dual N-channel MOSFET from Vishay.

  • Manufacturer: Vishay
  • Channel Type: dual N-channel
  • Maximum Drain-Source Breakdown Voltage: 60 V
  • Continuous Drain Current: 3.4 A @ 25°C
  • Gate Feature: Logic Level Gate
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 1.3W
  • Package: PowerPAK 1212-8 Dual
  • Application: Power Management

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Quantity Unit Price Ext. Price
3+ $20.3732 $61.1196
6+ $16.7165 $100.2990
10+ $16.1941 $161.9410
13+ $15.6717 $203.7321
17+ $15.1493 $257.5381
23+ $13.5821 $312.3883
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