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Same model may have multiple batches, images only for reference.
SI7230DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7230DN-T1-GE3

Part No SI7230DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A PPAK 1212-8
Datasheet
SI7230DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 211664-SI7230DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7230DN-T1-GE3 CAD Model

Description

The Vishay 211664-SI7230DN-T1-GE3 is an N-channel MOSFET that has a high popularity and balance supply and demand status.

  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Popularity: High
  • Supply and Demand: Balanced
  • Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 9A (Ta)
  • Maximum Rds On (Id,Vgs): 12 mOhm @ 14A, 10V
  • Category: Discrete semiconductor products
  • Usage: Commonly used

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4470 $58.1100
315+ $0.3673 $115.6995
490+ $0.3557 $174.2930
675+ $0.3442 $232.3350
870+ $0.3326 $289.3620
1,165+ $0.2980 $347.1700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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