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Same model may have multiple batches, images only for reference.
SI7328DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7328DN-T1-E3

Part No SI7328DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A PPAK 1212-8
Datasheet
SI7328DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 31.5nC @ 4.5V
Max Input Capacitance 2610pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.78W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 18.9A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064556-SI7328DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7328DN-T1-E3 CAD Model

Description

The Vishay electronic component with Win Source Part Number 064556-SI7328DN-T1-E3 is an N-Channel MOSFET with a maximum power dissipation of 3.78W (Ta), 52W (Tc).

  • Maximum Power Dissipation: 3.78W (Ta), 52W (Tc)
  • Supply and Demand Status: balanced
  • Package: PowerPAK 1212-8
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2520 $62.6000
115+ $1.0268 $118.0820
175+ $0.9956 $174.2300
240+ $0.9633 $231.1920
315+ $0.9309 $293.2335
415+ $0.8351 $346.5665
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,176 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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