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Same model may have multiple batches, images only for reference.
SI7356ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7356ADP-T1-GE3

Part No SI7356ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SI7356ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 6215pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064560-SI7356ADP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7356ADP-T1-GE3 CAD Model

Description

The Vishay SI7356ADP-T1-GE3 is an N-Channel MOSFET with a PowerPAK SO-8 package.

  • Channel Type: N-Channel MOSFET
  • Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Tc) @ 25°C
  • Maximum Rds On: 3 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 5.4W (Ta), 83W (Tc)
  • Maximum Gate Charge: 145nC @ 10V
  • Maximum Input Capacitance: 6215pF @ 15V
  • Drive Voltage: 4.5V, 10V
  • Status: obsolete
  • Popularity: medium
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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Availability: 6,000 pieces
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