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Same model may have multiple batches, images only for reference.
SI7380ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7380ADP-T1-E3

Part No SI7380ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SI7380ADP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 7785pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211666-SI7380ADP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7380ADP-T1-E3 CAD Model

Description

The Vishay SI7380ADP-T1-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 40A at 25°C.

  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A @ 25°C
  • Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 185nC @ 10V
  • Maximum Input Capacitance: 7785pF @ 15V
  • Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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Availability: 27,370 pieces
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