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Same model may have multiple batches, images only for reference.
SI7404DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7404DN-T1-E3

Part No SI7404DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.5A PPAK 1212-8
Datasheet
SI7404DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 30nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 13.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028634-SI7404DN-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7404DN-T1-E3 CAD Model

Description

The 028634-SI7404DN-T1-E3 is an N-channel MOSFET from Vishay.

  • Status: Obsolete (EOL)
  • Package: PowerPAK 1212-8
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 8.5A (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 30nC @ 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On at Id,Vgs: 13 mOhm @ 13.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0909 $54.5450
115+ $0.8951 $102.9365
175+ $0.8672 $151.7600
240+ $0.8392 $201.4080
310+ $0.8112 $251.4720
415+ $0.7273 $301.8295
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Availability: 1,370 pieces
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