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Same model may have multiple batches, images only for reference.
SI7413DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7413DN-T1-E3

Part No SI7413DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8.4A 1212-8
Datasheet
SI7413DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 400μA
Max Gate Charge 51nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 15 mOhm @ 13.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 133618-SI7413DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7413DN-T1-E3 CAD Model

Description

The Vishay SI7413DN-T1-E3 is a P-Channel MOSFET designed for use in various electronic applications.

  • Maximum Power Dissipation: 1.5W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Technology: SMD (SMT)
  • Package: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8.4A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 400μA
  • Maximum Gate Charge: 51nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 15 mOhm @ 13.2A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6070 $60.7000
235+ $0.4980 $117.0300
360+ $0.4826 $173.7360
495+ $0.4670 $231.1650
640+ $0.4514 $288.8960
860+ $0.4047 $348.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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