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Same model may have multiple batches, images only for reference.
SI7462DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7462DP-T1-GE3

Part No SI7462DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.6A PPAK SO-8
Datasheet
SI7462DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096172-SI7462DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Communications & Networking, Automotive
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian SI7462DP-T1-GE3 CAD Model

Description

The Vishay SI7462DP-T1-GE3 is an N-channel MOSFET designed for use in industrial, power management, communications, and networking applications.

  • Manufacturer: Vishay
  • Product Name: SI7462DP-T1-GE3
  • Application: Industrial, power management, communications, and networking
  • Power Dissipation (Max): 1.9W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 2.6A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 30nC @ 10V
  • Input Capacitance (Max): -
  • Case Package: PowerPAK SO-8
  • Operating Temperature: -55°C to 150°C

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